2SJ360

停产产品

Power MOSFET (P-ch single)

数据表

2SJ360 数据表/日文[Sep,2009]PDF: 276KB

数据表

2SJ360 数据表/英文[Sep,2009]PDF: 228KB

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Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

数据表

2SJ360 数据表/日文[Sep,2009]PDF: 276KB

数据表

2SJ360 数据表/英文[Sep,2009]PDF: 228KB

相关技术数据

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

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Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

产品概要

Application Scope Relay drivers
Polarity P-ch
Generation L²-π-MOSⅤ
RoHS Compatible Product(s) (#) Please contact us.

封装

Toshiba Package Name PW-Mini
Package Image 东芝 2SJ360 Power MOSFET (P-ch single)产品 PW-Mini 封装图片
JEITA SC-62
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)		 4.6×4.2×1.6
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS -60 V
Drain current ID -1 A

电气特性

项目 符号 条件 值 单位
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 730 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 1.2 Ω
Input capacitance (Typ.) Ciss - 155 pF

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