Lineup Expansion of Automotive 80V N-channel MOSFETs Suitable for 48V Systems in Automotive Equipment

Lineup Expansion of Automotive 80V N-channel MOSFETs Suitable for 48V Systems in Automotive Equipment

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched automotive 80V N-channel MOSFETs, which are the first products in the latest[1] generation process "U-MOSX-H series" to be adopted the SOP Advance(WF) package, expanding its lineup suitable for 48V systems in automotive equipment. These products feature low On-resistance for the power saving of equipment, with a drain-source On-resistance of 2.55mΩ (max) for the "XPH2R608QB" and 3.9mΩ (max) for the "XPH3R908QB”.

In recent years, the shift to 48V automotive systems has been progressing to reduce power loss and to achieve thinner and lighter wiring harnesses by lowering current. MOSFETs used in 48V automotive systems are required to have a withstand voltage of at least 80V and a low On-resistance. To meet these requirements, Toshiba has developed 80V MOSFETs with low On-resistance.

In addition, the new products comply with the automotive reliability standard AEC-Q101 and feature a surface-mount type SOP Advance(WF) package that uses a wettable flank[2] structure. It offers high visibility of solder fillets[3], making it easy to verify the board mounting conditions with automatic visual inspection (AVI) equipment, thereby contributing to the automation of inspections on the production line. Furthermore, it adopts a Cu connector structure to reduce package resistance.

Toshiba will continue to develop automotive MOSFET products suitable for 48V systems to meet the diverse needs of our customers and support various applications for automotive equipment.

Notes:
[1] As of April 2026
[2] Shape of side leads of package
[3] Solder fillet refers to the soldered portion of a component mounted on a printed circuit board.

特点

  1.  Automotive 80V MOSFETs with low On-resistance using SOP Advance(WF) package
  2. SOP Advance(WF) package with a wettable flank structure that facilitates automatic visual inspection of the board mounting conditions

Features Explanation

1. Automotive 80V MOSFETs with low On-resistance using SOP Advance(WF) package

The new products, XPH2R608QB and XPH3R908QB, are the first automotive 80V products to be adopted in the SOP Advance(WF) package.
These products have achieved low On-resistance (RDS(ON)) by utilizing the latest generation U-MOSX-H process and adopting the SOP Advance(WF) package with a Cu connector structure to reduce package resistance.
The lineup of automotive 80V U-MOSX-H series also includes the XPQR8308QB, which features the high heat dissipation L-TOGL™ package.

XPH2R608QB: RDS(ON)=2.55mΩ (max) (VGS=10V) 
XPH3R908QB: RDS(ON)=3.9mΩ (max) (VGS=10V) 

2. SOP Advance(WF) package with a wettable flank structure that facilitates automatic visual inspection of the board mounting conditions

The SOP Advance(WF) package adopts a wettable flank structure at the terminal cut-off section. This structure (wettable flank) improves the visibility and solder wettability of the soldered state. This makes it easier to check the component mounting state with automatic visual inspection (AVI) equipment, which also contributes to improved reliability.

Figure 1. Terminal structure of SOP Advance(WF) Package
Figure 1. Terminal structure of SOP Advance(WF) Package
Figure 2. Mounted image of SOP Advance(WF)  package on PCB
Figure 2. Mounted image of SOP Advance(WF) package on PCB

应用

・48V systems in automotive equipment

Motor drives, switched-mode power supplies, load switches, etc.

Main Specifications

(Unless otherwise specified, Ta=25°C)

Part number XPH2R608QB XPH3R908QB
Polarity N channel
Absolute maximum ratings Drain-source voltage VDSS (V) 80
Drain current (DC) I(A) 120 80
Drain current (pulsed) IDP (A) 360 240
Channel temperature Tch (°C) 175
Electrical characteristics Drain-source On-resistance RDS(ON) (mΩ) VGS=6V Max 3.5 5.7
VGS=10V Max 2.55 3.9
Gate threshold voltage Vth (V) VDS=10V 2.5 to 3.5
Dynamic characteristics Input capacitance Ciss (pF) VDS=10V, VGS=0V, f=1MHz Typ. 6200 3950
Total gate charge (gate-source plus gate-drain)
Q(nC)
VDD≃64V, VGS=10V Typ. 95 63
Thermal characteristics Channel-to-case thermal
impedance
Zth(ch-c)(°C/W)
Tc=25°C Max 0.88 1.13
Package SOP Advance(WF)
Series U-MOSX-H
Sample check & availability Buy Online Buy Online

Application Circuit Example

Brushless DC Motor Drive Circuit (Nch type)
Brushless DC Motor Drive Circuit (Nch type)
DC-DC Converter Circuit (Non-isolated step-down type)
DC-DC Converter Circuit (Non-isolated step-down type)

Follow the link below for more on Toshiba Automotive MOSFETs.
Automotive MOSFETs

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