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Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched automotive 80V N-channel MOSFETs, which are the first products in the latest[1] generation process "U-MOSX-H series" to be adopted the SOP Advance(WF) package, expanding its lineup suitable for 48V systems in automotive equipment. These products feature low On-resistance for the power saving of equipment, with a drain-source On-resistance of 2.55mΩ (max) for the "XPH2R608QB" and 3.9mΩ (max) for the "XPH3R908QB”.
In recent years, the shift to 48V automotive systems has been progressing to reduce power loss and to achieve thinner and lighter wiring harnesses by lowering current. MOSFETs used in 48V automotive systems are required to have a withstand voltage of at least 80V and a low On-resistance. To meet these requirements, Toshiba has developed 80V MOSFETs with low On-resistance.
In addition, the new products comply with the automotive reliability standard AEC-Q101 and feature a surface-mount type SOP Advance(WF) package that uses a wettable flank[2] structure. It offers high visibility of solder fillets[3], making it easy to verify the board mounting conditions with automatic visual inspection (AVI) equipment, thereby contributing to the automation of inspections on the production line. Furthermore, it adopts a Cu connector structure to reduce package resistance.
Toshiba will continue to develop automotive MOSFET products suitable for 48V systems to meet the diverse needs of our customers and support various applications for automotive equipment.
Notes:
[1] As of April 2026
[2] Shape of side leads of package
[3] Solder fillet refers to the soldered portion of a component mounted on a printed circuit board.
The new products, XPH2R608QB and XPH3R908QB, are the first automotive 80V products to be adopted in the SOP Advance(WF) package.
These products have achieved low On-resistance (RDS(ON)) by utilizing the latest generation U-MOSX-H process and adopting the SOP Advance(WF) package with a Cu connector structure to reduce package resistance.
The lineup of automotive 80V U-MOSX-H series also includes the XPQR8308QB, which features the high heat dissipation L-TOGL™ package.
XPH2R608QB: RDS(ON)=2.55mΩ (max) (VGS=10V)
XPH3R908QB: RDS(ON)=3.9mΩ (max) (VGS=10V)
The SOP Advance(WF) package adopts a wettable flank structure at the terminal cut-off section. This structure (wettable flank) improves the visibility and solder wettability of the soldered state. This makes it easier to check the component mounting state with automatic visual inspection (AVI) equipment, which also contributes to improved reliability.
・48V systems in automotive equipment
Motor drives, switched-mode power supplies, load switches, etc.
(Unless otherwise specified, Ta=25°C)
| Part number | XPH2R608QB | XPH3R908QB | |||
|---|---|---|---|---|---|
| Polarity | N channel | ||||
| Absolute maximum ratings | Drain-source voltage VDSS (V) | 80 | |||
| Drain current (DC) ID (A) | 120 | 80 | |||
| Drain current (pulsed) IDP (A) | 360 | 240 | |||
| Channel temperature Tch (°C) | 175 | ||||
| Electrical characteristics | Drain-source On-resistance RDS(ON) (mΩ) | VGS=6V | Max | 3.5 | 5.7 |
| VGS=10V | Max | 2.55 | 3.9 | ||
| Gate threshold voltage Vth (V) | VDS=10V | 2.5 to 3.5 | |||
| Dynamic characteristics | Input capacitance Ciss (pF) | VDS=10V, VGS=0V, f=1MHz | Typ. | 6200 | 3950 |
| Total gate charge (gate-source plus gate-drain) Qg (nC) |
VDD≃64V, VGS=10V | Typ. | 95 | 63 | |
| Thermal characteristics | Channel-to-case thermal impedance Zth(ch-c)(°C/W) |
Tc=25°C | Max | 0.88 | 1.13 |
| Package | SOP Advance(WF) | ||||
| Series | U-MOSX-H | ||||
| Sample check & availability | ![]() |
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Follow the link below for more on Toshiba Automotive MOSFETs.
Automotive MOSFETs
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