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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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先进的超结MOSFET DTMOSⅥ产品
DTMOS系列具有超结结构，即使漂移层具有高耐受电压，也能够降低其电阻。从我们的第四代DTMOSⅣ系列开始，将采用单层外延工艺来实现低导通电阻和高速开关。最新一代DTMOSⅥ系列与传统的DTMOSⅣ-H系列相比，通过降低漏源导通电阻和栅漏电荷（RDS(ON)×Qgd）的乘积（这是品质因数），能够提高开关电源的效率。
漏源导通电阻与栅漏电荷（RDS(ON)×Qgd）的乘积是品质因数：值越小，MOSFET的导通损耗和开关损耗越低。在DTMOSⅥ系列中，通过优化栅极设计和工艺，与传统DTMOSIV-H系列产品相比，RDS(ON)×Qgd降低约40%。此外，与竞争对手的同等器件相比，我们降低了约30%，这有助于提高开关电源的效率。
通过降低漏源导通电阻和栅漏电荷（RDS(ON)×Qgd）的乘积（这是MOSFET的品质因数），我们对最大输出功率为2.5kW的PFC电路评估板进行效率评估，发现与传统的DTMOSⅣ系列产品相比，整个输出功率范围内的功率转换效率提高了。特别是，在2.5kW的输出功率下，功率转换效率提高了0.36%，就输出功率水平而言降低了约10W。这有助于提高服务器和电信设备等工业设备的开关电源所需的效率。
上图显示了在最高功率输出为1.6kW的服务器AC-DC电源PFC电路中，DTMOSⅥ、传统产品和竞争对手产品的功率转换效率的比较评估结果。我们的DTMOSⅥ系列在AC230V和AC180V输入条件下，在50%负载条件电源效率高达大约95%。与传统产品和竞争对手产品相比，本产品在整个输出功率范围内都能达到相同或更高的效率，适合用于服务器等需要高效率开关电源的应用。
DTMOSVI系列MOSFET
电路仿真
利用开关电源选型工具库（SMPS Lib.），您可以根据实际需求选择和下载电源单元的各种基本拓扑，以便在仿真环境中验证MOSFET的性能。
在线电路仿真器
在线电路仿真器是帮助用户验证和选择MOSFET，无需构建仿真环境，即可轻松验证运行情况。
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