TPM2R808QM

新产品

Power MOSFET (N-ch single 60V<VDSS≤150V)

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOP Advance(E)
Package Image 东芝 TPM2R808QM Power MOSFET (N-ch single 60V&lt;VDSS&le;150V)产品 SOP Advance(E) 封装图片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
4.9×6.1×1.0
Package Dimensions 查看
Land pattern dimensions 查看
SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>*1 *2

Download from SamacSys
*1 *2

 Please refer to the link destination to check the detailed size.

*1

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Drain-Source voltage VDSS 80 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 168 A
Power Dissipation PD 200 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Max) Vth - 3.5 V
Gate threshold voltage (Min) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 4.2
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.8
Input capacitance (Typ.) Ciss - 5090 pF
Total gate charge (Typ.) Qg VGS=10V 71 nC
Output charge (Typ.) Qoss - 74 nC
Reverse recovery time (Typ.) trr - 51 ns
Reverse recovery charge (Typ.) Qrr - 51 nC
购买及样品申请
请联系东芝官方代理商或就近联系我们的销售网点。
您可以通过以下链接搜索及购买少量样品。

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Sep,2025

Sep,2025

Sep,2025

Jan,2026

Mar,2026

*1

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

*2

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

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