TK3R3E03GL

停产产品

Power MOSFET (N-ch single VDSS≤30V)

数据表

TK3R3E03GL 数据表/日文[Dec,2015]PDF: 540KB

数据表

TK3R3E03GL 数据表/英文[Dec,2015]PDF: 433KB

Simulation Model

PSpice Model[Jun,2016]lib: 3KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

数据表

TK3R3E03GL 数据表/日文[Dec,2015]PDF: 540KB

数据表

TK3R3E03GL 数据表/英文[Dec,2015]PDF: 433KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

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Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jun,2016]lib: 3KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

产品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅦ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Please contact us.

封装

Toshiba Package Name TO-220
Package Image 东芝 TK3R3E03GL Power MOSFET (N-ch single VDSS≤30V)产品 TO-220 封装图片
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 10.16×15.1×4.45
Package Dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 147 A
Power Dissipation PD 104 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 2.3 V
Gate threshold voltage (Min) Vth - 1.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 4.1 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 3.3 mΩ
Input capacitance (Typ.) Ciss - 4350 pF
Total gate charge (Typ.) Qg VGS=10V 67 nC
Output charge (Typ.) Qoss - 18 nC
Reverse recovery time (Typ.) trr - 42 ns
Reverse recovery charge (Typ.) Qrr - 22 nC

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Jun,2016

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