TK200F04N1L

不推荐用于新设计

Power MOSFET (N-ch single 30V<VDSS≤60V)

产品概要

Application Scope DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name TO-220SM(W)
Package Image 东芝 TK200F04N1L Power MOSFET (N-ch single 30V&lt;VDSS&le;60V)产品 TO-220SM(W) 封装图片
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
10.0×13.0×3.5
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 200 A
Power Dissipation PD 375 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Max) Vth - 3.0 V
Gate threshold voltage (Min) Vth - 2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 1.37
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.9
Input capacitance (Typ.) Ciss - 14920 pF
Total gate charge (Typ.) Qg VGS=10V 214 nC
Reverse recovery time (Typ.) trr - 118 ns
Reverse recovery charge (Typ.) Qrr - 136 nC

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Mar,2021

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