TK100F04K3

停产产品

Power MOSFET (N-ch single 30V<VDSS≤60V)

数据表

TK100F04K3 数据表/日文[Jun,2020]PDF: 525KB

数据表

TK100F04K3 数据表/英文[Jun,2020]PDF: 379KB

Simulation Model

PSpice Model[Oct,2016]lib: 3KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

数据表

TK100F04K3 数据表/日文[Jun,2020]PDF: 525KB

数据表

TK100F04K3 数据表/英文[Jun,2020]PDF: 379KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Oct,2016]lib: 3KB

Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

产品概要

Application Scope Switching Voltage Regulators / DC-DC Converters / Motor Drivers
Polarity N-ch
Generation U-MOSⅣ
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name TO-220SM(W)
Package Image 东芝 TK100F04K3 Power MOSFET (N-ch single 30V&lt;VDSS&le;60V)产品 TO-220SM(W) 封装图片
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)		 10.0×13.0×3.5
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 100 A
Power Dissipation PD 180 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 4.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 3 mΩ
Input capacitance (Typ.) Ciss - 4500 pF
Total gate charge (Typ.) Qg VGS=10V 102 nC
Reverse recovery time (Typ.) trr - 61 ns
Reverse recovery charge (Typ.) Qrr - 49 nC

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Oct,2016

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