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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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东芝标准数字隔离器的结构是利用芯片内的氧化膜进行绝缘。 因此,可通过应用与MOSFET栅极氧化层随时间击穿相同的概念(TDDB:与时间相关的电介质击穿[注1])来预测标准数字隔离器的隔离寿命。
“用于基本隔离和加强隔离的磁耦合器和电容耦合器”[注2]已由国际安全标准标准化,标准号为IEC 60747-17: 2020(第1版)和VDE V 0884-11,并规定了上述TDDB的测试条件。
DCL54x01系列符合VDE V 0884-11标准,应用增强隔离至最大工作隔离电压VIORM=1.0kVrms[注3]。在1.2kVrms条件下进行TDDB测试,安全系数(1.2)乘以加强隔离所需的上述VIORM。此外,在加强隔离所需的1ppm不良率外推线上,1.2kVrms条件下的寿命确定点为37.5年[注4].
作为参考,除了测试上述VDE认证所需的最短额定寿命外,我们预测在测试电压的加速条件下,隔离寿命为70年或更长,超过了VDE规格。
[注1]请参考东芝的半导体考靠性手册(18.4MB)。
[注2]请购买标准文件并查看规格。
[注3]截至2023年3月,DCL541L01、DCL541H01、DCL542L01和DCL542H01的VDE批准仍在办理之中。
[注4]额定寿命20年的安全系数乘以1.875后得到该值。
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