Toshiba Electronic Devices & Storage Corporation ("Toshiba”) has launched and expanded its lineup of surge-protection Zener diodes, “XCEZ series,” for automotive equipment. These diodes feature small and versatile SOD-523 package, making them suitable for use in automotive systems such as advanced driver-assistance systems (ADAS) and battery management systems (BMS).
Recently, as automotive equipment has become increasingly electrified, there has been a growing demand for measures to prevent malfunctions caused by noise, such as electrostatic discharge (ESD) in nanosecond range and switching surges in the microsecond to millisecond range. The XCEZ series products suppress system malfunctions caused by such noise, which can penetrate power supply lines and connectors of various automotive ECUs[1]. The new products contribute to the protection of devices and circuits by absorbing external noise and surges.
To support high-density mounting, the XCEZ series adopts an industry-standard, general-purpose SOD-523 package (1.6×0.8mm), which reduces the mounting area by approximately 59% compared to SOD-323 package (2.5×1.25mm) of Toshiba’s existing XCUZ series.
Similar to the XCUZ series, the XCEZ series also uses Toshiba's proprietary Zener process to achieve lower dynamic resistance. One of the products in this series, the XCEZ5V6, features a low dynamic resistance of 0.16Ω (typ.), providing effective absorption of surge voltage that helps prevent system damage and malfunction, thereby contributing to the protection of devices and circuits.
The XCEZ series, similar to the XCUZ series, offers a lineup of 20 products with standard Zener voltages ranging from 5.6V to 36V, suitable for major power supply lines. It also complies with AEC-Q101, the reliability testing standard for automotive electronic components.
Toshiba will continue to expand its lineup of surge-protection Zener diodes for automotive equipment and contribute to enhancing the performance and reliability of automotive systems.
Note:
[1] ECU: Electronic control unit
In the XCEZ series, Toshiba has adopted the highly compatible and small SOD-523 package (1.6×0.8mm), which reduces the mounting area by approximately 59% compared to the SOD-323 package (2.5×1.25mm) used in Toshiba’s existing XCUZ series. This contributes to the miniaturization of circuit boards.
As a protective device, dynamic resistance is an important factor in absorbing surge voltages that enter from power lines, connectors, etc. A low dynamic resistance allows surge current to flow more easily to the Zener diode. Toshiba's proprietary Zener process provides a steep slope in ITLP-VTLP curve at the reverse-voltage (VR) end, achieving a lower dynamic resistance. This enables high absorption of surge voltage to prevent damage and malfunction of the system and enhances protection of devices and circuits.
The new products achieve a high maximum allowable Zener surge power of 6W with a 10ms pulse width, enabling protection of semiconductor devices against long pulse width conditions in the millisecond range, such as high switching surges and overvoltages close to DC.
Note:
[2] Averaging window: t1=30ns to t2=60ns
Notes:
[3] IVI (in-vehicle infotainment): General term of the (integrated) system that provides both information and entertainment.
[4] ADAS (advanced driver-assistance systems)
[5] BMS (battery management system): Systems for safety control of charge-type secondary batteries such as lithium-ion batteries
(Unless otherwise specified, Ta=25°C)
Part number |
Absolute maximum ratings | Electrical characteristics | Sample Check & Availability | |||||||
---|---|---|---|---|---|---|---|---|---|---|
Electrostatic discharge voltage VESD[6] (kV) |
Zener voltage VZ (V) |
Dynamic resistance RDYN [7] (Ω) |
Clamp voltage VC [7][8] (V) |
Total capacitance Ct [9] (pF) |
||||||
Contact | Air | Min | Typ. | Max | Test current IZ (mA) | Typ. | Typ. | Typ. | ||
XCEZ5V6 | ±30 | 5.3 | 5.6 | 6.0 | 5 | 0.16 | 9.0 | 125 | ![]() |
|
XCEZ6V2 | ±30 | 5.8 | 6.2 | 6.6 | 5 | 0.21 | 10.0 | 105 | ![]() |
|
XCEZ6V8 | ±30 | 6.4 | 6.8 | 7.2 | 5 | 0.27 | 13.0 | 88 | ![]() |
|
XCEZ7V5 | ±30 | 7.0 | 7.5 | 7.9 | 5 | 0.32 | 14.0 | 78 | ![]() |
|
XCEZ8V2 | ±30 | 7.7 | 8.2 | 8.7 | 5 | 0.37 | 16.5 | 67 | ![]() |
|
XCEZ9V1 | ±30 | 8.5 | 9.1 | 9.6 | 5 | 0.44 | 17.0 | 62 | ![]() |
|
XCEZ10V | ±30 | 9.4 | 10.0 | 10.6 | 5 | 0.52 | 19.0 | 60 | ![]() |
|
XCEZ11V | ±30 | 10.4 | 11.0 | 11.6 | 5 | 0.60 | 24.0 | 48 | ![]() |
|
XCEZ12V | ±30 | 11.4 | 12.0 | 12.6 | 5 | 0.70 | 26.0 | 44 | ![]() |
|
XCEZ13V | ±30 | 12.4 | 13.0 | 14.1 | 5 | 0.80 | 27.0 | 42 | ![]() |
|
XCEZ15V | ±30 | 13.8 | 15.0 | 15.6 | 5 | 0.60 | 24.0 | 36 | ![]() |
|
XCEZ16V | ±30 | 15.3 | 16.0 | 17.1 | 5 | 0.50 | 27.0 | 35 | ![]() |
|
XCEZ18V | ±30 | 16.8 | 18.0 | 19.1 | 5 | 0.40 | 28.5 | 31 | ![]() |
|
XCEZ20V | ±30 | 18.8 | 20.0 | 21.2 | 5 | 0.35 | 30.5 | 29 | ![]() |
|
XCEZ22V | ±30 | 20.8 | 22.0 | 23.3 | 5 | 0.40 | 32.0 | 27 | ![]() |
|
XCEZ24V | ±30 | 22.8 | 24.0 | 25.6 | 5 | 0.60 | 36.5 | 26 | ![]() |
|
XCEZ27V | ±30 | 25.1 | 27.0 | 28.9 | 2 | 0.90 | 45.0 | 23 | ![]() |
|
XCEZ30V | ±30 | 28.0 | 30.0 | 32.0 | 2 | 1.25 | 47.5 | 21 | ![]() |
|
XCEZ33V | ±25 | 31.0 | 33.0 | 35.0 | 2 | 1.80 | 57.0 | 19 | ![]() |
|
XCEZ36V | ±20 | 34.0 | 36.0 | 38.0 | 2 | 2.60 | 63.0 | 18 | ![]() |
Notes:
[6] according to ISO10605 (C=330pF / R=2kΩ)
[7] TLP parameters: Z0=50Ω, tp=100ns, tr=300ps, averaging window t1=30ns to t2=60ns, extraction of dynamic resistance using least squares fit of TLP characteristics between ITLP1=16A and ITLP2=30A.
[8] ITLP=16A
[9] VR=0V, f=1MHz
Note:
[10] This application circuit example is a reference example, please perform sufficient evaluation in the mass-production design. In addition, it does not permit the use of industrial property rights.
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