HN4A51J

不推荐用于新设计

Transistor for low frequency small-signal amplification 2 in 1

产品概要

Features Low Noise
Polarity PNP + PNP
Internal Connection Common base
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOT-25 (SMV)
Package Image 东芝 HN4A51J Transistor for low frequency small-signal amplification 2 in 1产品 SMV 封装图片
JEITA SC-74A
Package Code SOT-25
Pins 5
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×1.1
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Collector Current (Q1) IC -0.1 A
Collector Current (Q2) IC -0.1 A
Collector-emitter voltage (Q1) VCEO -120 V
Collector-emitter voltage (Q2) VCEO -120 V

电气特性

项目 符号 条件 单位
DC Current Gain hFE (Q1) (Max) hFE IC=-0.002A
VCE=-6V
700 -
DC Current Gain hFE (Q1) (Min) hFE IC=-0.002A
VCE=-6V
200 -
DC Current Gain hFE (Q2) (Max) hFE IC=-0.002A
VCE=-6V
700 -
DC Current Gain hFE (Q2) (Min) hFE IC=-0.002A
VCE=-6V
200 -
Collector Emitter Saturation Voltage (Q1) (Max) VCE(sat) IB=-1mA
IC=-0.01A
-0.3 V
Collector Emitter Saturation Voltage (Q2) (Max) VCE(sat) IB=-1mA
IC=-0.01A
-0.3 V
Transition frequency (Q1) (Typ.) fT IC=-0.001A
VCE=-6V
100 MHz
Transition frequency (Q2) (Typ.) fT IC=-0.001A
VCE=-6V
100 MHz

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Mar,2026

Mar,2026

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