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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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近年来,随着电子设备的小型化、高密度贴装、高环境温度等严苛的使用条件,在选择、使用电子元器件的配置、电路板的设计等方面产生了各种各样的发热问题。 因此,使用具有三种热传递形式(热传导、热对流和热辐射)的冷却模型进行热设计的重要性与日俱增。
冷却仿真需要热模型,例如外壳、电路板和安装的组件。东芝电子元件及存储装置株式会社(简称“东芝”) 创建了并发布了针对MOSFET进行冷却仿真的简化CFD模型。该CFD简化模型可与热流体分析工具联和使用,以可视化的形式呈现三维特性(温度分布和流速)。
关于简化CFD模型的用法,请参阅应用说明。
图2显示了由于MOSFET的损耗而产生热量的模拟结果。 它显示随着 MOSFET 温度升高,热量会扩散到电路板和散热器。
图3显示了分析过程中腔体内的气流速度和热流动情况。并可查看电路板周围流体(空气)的流速和流动路径。
关于具有简化CFD模型的MOSFET的列表,请参阅以下网页。