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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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为何达林顿晶体管（例如，TLP187和TLP387）的VECO非常低（0.3V）？使用此类晶体管时应采取哪些防范措施？
将具有基极-发射极电阻的达林顿结构的晶体管集成至硅芯片中时，杂散二极管Di以同等方式位于发射极和集电极之间。因此，对于VECO，出现了Di正向特性。故指定的VECO值非常低（0.3V）。电流通过Di元件在发射极和集电极之间流动。电路设计必须确保不超过VECO值（0.3V）。