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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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MOS对静电很敏感。如何保护MOSFET免受静电影响？
为了保护MOSFET免受静电影响，CMOS晶体管的每个输入引脚都配备了保护电路，以保护输入栅极免受静电影响。通常，根据人体模型（HBM），它们的额定值为2 kV或更高。
即使使用了保护电路，也应避免器件直接受到放电影响的情况。尽管存在这些电路，但仍然存在器件故障、损坏或性能退化的风险。
有关防静电的一般措施，另请参阅“半导体操作注意事项和要求”。
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