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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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What changes when Si MOSFET/IGBT is replaced with SiC MOSFET?
By replacing Si IGBT with SiC MOSFET, it is possible to reduce the size and weight of the equipment and achieve highly efficient power conversions due to high frequency operation. Comparison of characteristics of Si MOSFET/IGBT and SiC MOSFET are shown in Table1.
| Electrical Characteristics Symbol （Improvement） |
Relation on application use | Si material | SiC material | |
|---|---|---|---|---|
| MOSFET | IGBT (Built-in *FRD) |
MOSFET (Built-in SBD) |
||
| High Voltage range (Large) |
High Voltage range of set | ★★ | ★★★ | ★★★ |
| Switching Loss (Small) |
Efficiency (Smallness of the loss at the Turn-on/off time) |
★★ | ★ | ★★★ |
| Forward Voltage of Built in Diode (Small) |
Efficiency (Smallness of the loss at the energy for Diode) |
★★ | ★★ | ★★★ |
| Reverse recovery time of Built in Diode trr (Small) |
Efficiency (Smallness of the loss at the Turn-on) |
★ | ★★ | ★★★ |
Table 1. Comparison of characteristics of Si MOSFET, Si IGBT and SiC MOSFET
When Toshiba’s SiC MOSFET and Si IGBT are switched at Ta =25°C, the switching loss waves are shown in Figures 1(a) and 1(b). For SiC MOSFET, the turn-off loss and turn-on loss are reduced by 65% compared to Si IGBT.
i) The reduction in turn-on loss is due to the smaller trr・Irr of SiC MOSFET's built-in SiC SBD affecting the loss than Si IGBT's built-in Si FRD.
ii) The reduction of turn-off loss is influenced by the fact that SiC MOSFET has no accumulation of minority carrier and no loss due to tail current as in Si IGBT.
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