Is the back of the SiC MOSFET package insulated?

Toshiba’s SiC MOSFET's TO-247 and TO-247-4L(X) packages have exposed electrodes on the back when viewed from the marked side and are not insulated. The backside electrode is connected to the drain and has a high potential. When attaching a heat sink connected to the ground, insulate this electrode (indicated by the red frame in Figure 1) and make sure that it does not contact with peripheral components.
To calculate the creepage distance between the heat sink and the product or to determine the distance between the terminals, refer to MOSFET package information in the link below.

Package information:

●　MOSFET

For attaching the heat sink, refer to the application notes in the link below.

●　Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes (0.94MB)

The following documents also contain related information.