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图（a）显示了一个IGBT应用电路示例。若IGBT在承载负载电流时关断，就会产生浪涌电压。浪涌电压是由IGBT电流（-diC/dt）以及封装和导线杂散电感（LS）骤变引起的。此时，将VCEP = LS・diC/dt＋VCC瞬时施加至IGBT。如果施加的电压超过其击穿电压，则IGBT会永久损坏。此问题的主要解决方案就是减小主电流通路的杂散电感（LS）。因此，有必要增加导线的宽度并缩短其长度。如果很难以减小杂散电感，则应通过增加与栅极串联连接的外部栅极电阻值来降低IGBT的开关速度。但应小心操作，因为这会导致开关损耗增加。也可通过在IGBT的集电极和发射极端子之间插入一个缓冲电路来降低浪涌电压。但缓冲电路会导致充电／放电损耗，从而增加整体电路损耗。