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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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可使用哪些类型的晶体管?

作为一种用于放大或转换电子信号的半导体器件,晶体管大致可分为三类:双极晶体管(双极结型晶体管:简称为“BJT”)、场效应晶体管(FET)和绝缘栅双极晶体管(IGBT)。

双极晶体管是一种将电子和空穴作为电荷载流子的晶体管。通常有两种类型的双极晶体管:npn和pnp。

场效应晶体管是一种主载流通路内无pn结的单极器件。会生产以下两种类型的场效应晶体管:N沟道和P沟道。

IGBT由一个电压驱动MOSFET和一个大电流晶体管组成。

这些晶体管的典型表示符号如下所示:

双极晶体管(npn)
双极晶体管(npn)
绝缘栅场效应晶体管MOSFET(N沟道)
绝缘栅场效应晶体管MOSFET(N沟道)
绝缘栅双极晶体管IGBT
绝缘栅双极晶体管IGBT

相关信息,详见e-learning第3章“晶体管“

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