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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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晶体管和MOSFET不被损坏或不易劣化的区域称为安全工作区(SOA)。工作点必须在该曲线范围内。对于双极晶体管,SOA的曲线划分为热耗散极限和二次击穿的极限。对于MOSFET,SOA分为电流极限、热耗散极限、二次击穿极限和电压极限。近来,有一些产品的数据表中规定了导通电阻极限区域。
最大额定值:功率MOSFET应用说明(PDF:1,075KB)