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切勿向基极端子施加超过绝对最大额定值表(表1)中所示的发射极-基极额定电压(VEBO)的电压(对于npn晶体管为负偏压,对于pnp晶体管为正偏压)。否则会降低hFE和其它参数。
双极晶体管的发射极浓度最高,其次是基极,然后是集电极。发射极的浓度比基极的浓度高100倍以上。浓度越高,耐电压越低。
VEBO只有几伏。将大幅值信号输入基极时必须小心。此外,有些电路中还施加了反向偏压,例如下面的电路。设计时请考虑使用条件。
当单稳态多谐振荡器由双极晶体管组成时,可向基极施加超过额定VEBO的偏置电压。
下文介绍了图1中所示的多谐振荡器的操作。
以下文件还包含相关信息: