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切勿向基极端子施加超过绝对最大额定值表(表1)中所示的发射极-基极额定电压(VEBO)的电压(对于npn晶体管为负偏压,对于pnp晶体管为正偏压)。否则会降低hFE和其它参数。
当单稳态多谐振荡器由双极晶体管组成时,可向基极施加超过额定VEBO的偏置电压。
下文介绍了图1中所示的多谐振荡器的操作。
1.假设Q1最初为导通状态。因此,Q1的集电极电压接近GND电平。
C1通过R3充电,而C2通过R2充电。
2.C1充电后,Q2的基极-集电极电压达到其导通电压(约0.7V),从而导通。
Q2的集电极电压降至接近GND的电平。在此之前,C2两端的电压充电至VCC–0.7V。即使Q2的集电极电压下降,C2仍保持充电状态。因此,C2基极端上Q1端子的电压降至0.7V-VCC。
重复这些步骤以充当单稳态多谐振荡器。
假设VCC=10V,则Q1和Q2的发射极-基极电压达到-9.3V,超过额定VEBO(-5V)。