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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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双极晶体管(双极结型晶体管:BJT)由形成两个结的三个半导体区域组成。 有两种结构类型:npn和pnp。可提供高达800 V的npn和高达-600 V的pnp产品。此外,还有偏置电阻内置晶体管(BRT)。我们还提供适用于低噪声放大器(LNA)和振荡器应用的射频(RF)晶体管。
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