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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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不能。晶体管在正确连接的情况下方能实现最佳性能。将集电极端和发射极端互换不仅会降低晶体管的性能,而且还可能永久损坏器件。
通常,双极晶体管的设计需保证实现高hFE。为实现此目的,发射极中的大量载流子(在npn晶体管中为电子)必须扩散至基极区,然后有效地穿过基极区进入集电极。还必须控制集电极区中的耗尽层,以增强晶体管的耐受电压(即集电极-基极电压,VCBO)。可通过以下方式满足这些条件:
1.使发射极区中的掺杂浓度高于基极区中的掺杂浓度;
2.减小基极区的厚度;
3.降低集电极区中的掺杂浓度。
因此,三个半导体区域中的掺杂浓度具有以下关系:发射极>>基极>集电极。
如果集电极端子和发射极端子反向连接,则不满足上述关系。在这种情况下,hFE会降低,从而使双极晶体管无法按预期工作,并可能导致基极电流超过其规定的额定值。此外,由于VCEO降低,晶体管关断时可能会击穿。由于上述原因,反向连接的晶体管可能会永久损坏。
除了设计为反向连接的静音晶体管*外,必须按正常方向连接典型的双极晶体管。
*目前,东芝不提供静音晶体管。