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当使用MOSFET作为负载开关时，如何减少出现的浪涌电流?
增加连接到MOSFE外部的栅极电阻Rgate可以减缓开关速度并抑制浪涌电流。
通常，用于稳定电压的大电容器Co将连接到MOSFET的输出侧。
当MOSFET导通时，浪涌电流IRUSH流至该电容器进行充电。
通过增加串联栅极电阻Rgate以降低该浪涌电流。
当栅极电阻增加时，上升的输出电流变得不那么明显。
但是，如果增加栅极电阻会影响开关速度和损耗，则有必要根据您的使用条件选择合适的栅极电阻。有关如何确定栅极电阻的详细信息，请参阅以下应用说明。