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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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请尽量缩短MOSFET栅极驱动信号的上升和下降时间。
至于MOSFET的工作,开关时间将随栅极电阻值的变化而变化。
当使用较小的栅极电阻时,开关时间变短,可能会发生振铃(阻尼振荡)。
振铃将导致振荡和EMI噪声。
当使用更大的栅极电阻时,开关时间变长。
结果导致开关损耗增加和热量产生。
在桥式电路中,因结合栅极电阻,上下MOSFET之间可能发生短路。
因此,有必要考虑最佳的栅极电阻。
关于MOSFET的开关,请参考“MOSFET Gate Date Circuit:Power MOSFET Application Notes”