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上电MOSFET一般不需要大驱动电流。但在高速开关的情况下,要注意电流驱动能力。
双极晶体管,需要较大的基极电流以维持低导通电压。然而,由于MOSFET为电压控制元件,因此只需要很小功率的就可以驱动,从而给栅极充电。但是由于通电MOSFET的输入电容Ciss较大,因此必须使用低阻抗驱动电路对输入电容进行快速充电,特别是对于高速开关。
作为充电所需栅极电流的指南,可根据数据表中指定的Qg属性简单地计算驱动电流。如果所需的开关时间为“t(目标值)”(例如,ton或toff),则:
Ig=Qg/t(目标值)
应用说明"Electrical characteristics: Power MOSFET application note"具有电荷电容特性的说明。也请参考以下内容。