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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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栅极与源极之间的齐纳二极管可用于短时间吸收VGSS额定值内的浪涌。
栅极与源极之间的齐纳二极管可防止静电放电(ESD)。它在短时间内吸收较大的过压(浪涌),并防止过大的电压施加于其它半导体。
栅极与源极之间的齐纳二极管仅用于吸收罕见的浪涌。请确认在实际工作条件下未对栅极施加大于VGSS额定值的过压。
可施加于产品的漏极电流(DC)受产品封装的载流能力、最高结温和安全工作区(SOA)的限制。
相关信息也请参考以下文档。