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MOSFET的电气特性（电荷特性Qg／Qgs1／Qgd／QSW／QOSS）
栅极电荷
由于MOSFET的栅极（G）输入端子是绝缘的，因此从栅极看到的电荷量Q是重要特性。图1.5展示了栅极电荷特性的定义。
总栅极电荷Qg
向栅极施加电压（从零电压到指定电压）的电荷量
栅极-源极电荷1 Qgs1
MOSFET开始导通所需的电荷量（在降低漏源电压之前）
栅极-漏极电荷Qgd
米勒平台（Miller plateau）上的栅极电荷量
栅极开关电荷Qsw
从栅极-源极电压达到Vth到米勒平台（Miller plateau）结束时存储在栅极电容中的电荷量
输出电荷Qoss
漏源电荷
栅极电荷量的定义见下图。
数据表说明
| 特性 | 符号 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 |
|---|---|---|---|---|---|---|
| 总栅极电荷 | Qg | VDD≈20V，VGS＝10V，ID＝50A | — | 103 | — | nC |
| VDD≈20V，VGS＝4.5V，ID＝50A | — | 49 | — | |||
| 栅极-源极电荷1 | Qgs1 | VDD≈20V，VGS＝5V，ID＝50A | — | 25 | — | |
| 栅极-漏极电荷 | Qgd | — | 12.4 | — | ||
| 栅极开关电荷 | QSW | — | 23 | — | ||
| 输出电荷 | QOSS | VDS＝20V，VGS＝0V | — | 85.4 | — |