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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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MOSFET数据表中列出的最大额定值是多少？
绝对最大额定值是一个标准，在运行期间及时是瞬间也不得超过。应该注意电路应设计在任何条件下都不偏离绝对最大额定值。如果超过额定值，特性可能无法恢复。
流过MOSFET的电流、施加的电压、消耗功率等的最大允许值定义为最大额定值。设计电路时，请注意供电电压的波动、电子元件特性的波动、电路调整时超过的最大额定值、环境温度的变化、输入信号的波动等，请避免超过其中一个额定值。请为您的应用选择合适的设备。
即使在工作范围内，可靠性也会因绝对最大额定值和降额程度而有很大差异。
有关降额信息，请参阅以下链接目标。
（规定项目可能因产品而异。除非另有说明，否则Ta＝25°C。）
Item |
Symbo |
Unit |
Description |
|
|---|---|---|---|---|
| Drain-source voltage | VDSS | V | The maximum voltage allowed between the drain and source with the gate and source shorted. | |
| Gate-source voltage | VGSS | V | The maximum voltage allowed between the gate and source with the drain and source shorted. | |
| Drain current | DC | ID | A | The maximum DC current allowed for the drain source. |
| Pulse | IDP | The maximum peak value of drain current allowed in pulse operation. | ||
| Allowable loss (Tc=25°C) | PD |
W |
The max. dissipation allowed for MOSFET. |
|
| Avalanche current | IAS | A | The maximum peak current (non-repetitive) allowed in the avalanche state. | |
| Avalanche energy | EAS |
mJ |
Maximum allowable loss energy at avalanche breakdown (non-repetitive). |
|
| Channel temperature | Tch |
°C |
The max. tip temp. allowed for MOSFET operation. |
|
| Storage temperature | Tstg |
°C |
Max. temp. value that can be stored without applying voltage to MOSFET. |
|
| Dielectric strength | VISO(RMS) | V | The maximum value of the dielectric strength between the specified case part of the package and the electrode terminal. | |
| Tightening torque | TOR | N•m | This is the maximum value of the force to turn in the rotational direction when tightening the screw. | |
Table 1: Example of absolute maximum ratings
See also the documentation below.