MOSFET数据表中列出的最大额定值是多少?

绝对最大额定值是一个标准,在运行期间及时是瞬间也不得超过。应该注意电路应设计在任何条件下都不偏离绝对最大额定值。如果超过额定值,特性可能无法恢复。

流过MOSFET的电流、施加的电压、消耗功率等的最大允许值定义为最大额定值。设计电路时,请注意供电电压的波动、电子元件特性的波动、电路调整时超过的最大额定值、环境温度的变化、输入信号的波动等,请避免超过其中一个额定值。请为您的应用选择合适的设备。

即使在工作范围内,可靠性也会因绝对最大额定值和降额程度而有很大差异。
有关降额信息,请参阅以下链接目标。

(规定项目可能因产品而异。除非另有说明,否则Ta=25°C。)

Item

Symbo

Unit

Description

Drain-source voltage VDSS V The maximum voltage allowed between the drain and source with the gate and source shorted.
Gate-source voltage VGSS V The maximum voltage allowed between the gate and source with the drain and source shorted.
Drain current DC ID A The maximum DC current allowed for the drain source.
Pulse IDP The maximum peak value of drain current allowed in pulse operation.
Allowable loss (Tc=25°C)

PD

W

The max. dissipation allowed for MOSFET.

Avalanche current IAS A The maximum peak current (non-repetitive) allowed in the avalanche state.
Avalanche energy

EAS

mJ

Maximum allowable loss energy at avalanche breakdown (non-repetitive).

Channel temperature

Tch

°C

The max. tip temp. allowed for MOSFET operation.

Storage temperature

Tstg

°C

Max. temp. value that can be stored without applying voltage to MOSFET.

Dielectric strength VISO(RMS) V The maximum value of the dielectric strength between the specified case part of the package and the electrode terminal.
Tightening torque TOR N•m This is the maximum value of the force to turn in the rotational direction when tightening the screw.

Table 1: Example of absolute maximum ratings

See also the documentation below.

在新窗口打开