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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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高压IPD中的自举电路是什么？
自举电路用于桥接电路的高压侧（上桥臂）器件的栅极驱动。
通常，N沟道MOSFET或IGBT的栅极以比源极电压或发射极电压高出10V至15V的电压进行驱动。当高压侧器件导通时，源极（或发射极）电压等于高压电源（VBB）的电压。因此，对于高边器件的栅极驱动，需要一个电压非常高的电源，该电压等于VBB与栅极-源极（栅极-发射极）电压的总和。下面显示了一个自举电路。当低压侧器件导通时，自举电容器（C）存储电荷，用于驱动高压侧器件的栅极。
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