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为何SiC肖特基势垒二极管（SBD）耐压高？
碳化硅（SiC）是一种宽带隙半导体。如下表所示，与硅（Si）相比，SiC具有高带隙、高介电击穿强度、高饱和速度等特性。
当对普通结构的SBD施加反向偏置电压时，耗尽层会从金属-半导体界面扩散。此时电场的图像如图所示，介电击穿强度在金属-半导体界面处最大。介电击穿强度即电场的最大理论值，绝缘强度等于耗尽层宽度和电场所表示的三角形区域的面积。
由于SiC的介电击穿强度约为Si的10倍，因此可形成高耐压的SiC SBD。
Si和主要宽带隙半导体的物理特性
| 特性 | 单位 | Si | ４H-SiC | 6H-SiC | 3C-SiC | GaN | GaAs | 金刚石 |
|---|---|---|---|---|---|---|---|---|
| 带隙 | eV | 1.12 | 3.26 | 3.02 | 2.23 | 3.39 | 1.43 | 5.47 |
| 电子迁移率μe | cm2/Vs | 1400 | 1000/1200 | 450/100 | 1000 | 900 | 8500 | 2200 |
| 空穴迁移率μh | 600 | 120 | 100 | 50 | 150 | 400 | 1600 | |
介电击穿 强度Ec |
V/cm | 3.0×105 | 2.8×106 | 3.0×106 | 1.5×106 | 3.3×106 | 4.0×105 | 1.0×107 |
| 导热系数λ | W/cmK | 1.5 | 4.9 | 4.9 | 4.9 | 2.0 | 0.5 | 20 |
饱和电子 漂移速度Vsat |
cm/s | 1.0×107 | 2.2×107 | 1.9×107 | 2.7×107 | 2.7x107 | 2.0×107 | 2.7×107 |
相对介电 常数ε |
11.8 | 9.7/10.2 | 9.7/10.2 | 9.7 | 9.0 | 12.8 | 5.5 |
