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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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齐纳二极管是一种pn结二极管。通过在与普通pn结二极管相反的方向上施加电压,在击穿区域(屈服区域)使用齐纳二极管。
齐纳二极管是一种pn结二极管。图1显示了pn结二极管的V-I曲线。典型的pn结二极管使用正向偏压,而齐纳二极管则使用反向偏压,因为其专门用于在击穿区域工作。根据p型和n型半导体的掺杂浓度,具有以下两种击穿机制。由于这两种击穿事件都发生在温度恒定的固定电压下,因此齐纳二极管也称为稳压二极管和恒压二极管。
实际上,发生这些击穿事件的区域并无明显区别。齐纳击穿更多发生在6V以下,而雪崩击穿更多发生在6V以上。
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