This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
请输入3个以上字符
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
请输入3个以上字符
我们开发了一种使用SmartMCDTM(一种内置微控制器的栅极驱动IC)进行无感矢量控制汽车车身电机控制电路。该参考设计对各种电路的设计要点、设计数据和使用方法进行了说明。
Click on components for more details
输入电压 | DC 6 V至18 V,12 V(典型值) |
---|---|
最大电机驱动电流 | 30 A(外部逆变器板) |
支持的电机和控制方式 | 3相无刷电机,无感矢量控制 |
硬件保护 | 过流指示(使用板载逆变器时为5.6 A) |
我们向设计人员提供电路操作概要和设计要点说明等资料。请单击每个选项卡,将其用于电路设计。
我们提供可加载到EDA工具中的电路数据、PCB布局数据以及PCB制造中使用的数据。多个工具供应商为您提供了多种格式。您可以使用您的工具进行自由编辑。
器件型号 | 器件目录 | 搭载部位・数量 | 说明 |
---|---|---|---|
车载预驱IC | 主板・1 | 带MCU的车载BLDC电机预驱IC | |
小型低导通电阻MOSFET | 逆变器板・6 | N沟道,MOSFET,40 V,12 A,18 mΩ@4.5 V,TSOP6F | |
功率MOSFET(N沟道单型30V<VDSS≤60V) | 逆变器板・6 | N沟道MOSFET,40 V,120 A,0.00135 Ω@10 V,DPAK+ | |
功率MOSFET(N沟道单型30V<VDSS≤60V) | 逆变器板・6 | N沟道MOSFET,40 V,120 A,0.00114 Ω@10 V,DSOP Advance(WF)M | |
功率MOSFET(N沟道单型30V<VDSS≤60V) | 逆变器板・6 | N沟道MOSFET,40 V,90 A,0.0024 Ω@10 V,SOP Advance(WF) | |
功率MOSFET(N沟道单型30V<VDSS≤60V) | 逆变器板・6 | N沟道MOSFET,40 V,40 A,0.0038 Ω@10 V,TSON Advance(WF) |
我们提供有助于设计和研究相似电路的参考资料,例如已安装产品的应用说明。请单击每个选项卡使用这些资料。