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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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该参考设计提供了采用1200V SiC MOSFET双有源桥(DAB)转换方法的5kW隔离双向DC-DC转换器的设计指南,数据和其他内容。
高压侧 | DC 732V至768V |
---|---|
低压侧 | DC 396V至404V |
额定功率 |
5.0kW |
电路配置 | 双有源桥(DAB)转换方法 |
“设计・文档”包含以下文档。
“设计・文件”包括下列文件。
*1:实际PCB在CR5000BD上设计。其他文件由CR5000BD文件生成。
*2:数据在CR5000BD上生成。
器件型号 | 器件目录 | 搭载部位・数量 | 说明 |
---|---|---|---|
SiC MOSFET |
高压侧开关・4 |
1200V/70mΩ(典型值) @VGS=20V/TO-3P(N) |
|
MOSFET |
低压侧开关・4 |
650V/51mΩ(典型值)@VGS=10V/TO-247 |
|
TLP5214A | 智能栅极驱动IC |
栅极驱动・8 | 光耦(光电输出)/爬电间隙8mm/ 110 ℃高温工作/SO16L |
隔离放大器 |
电压检测・2 |
光耦(光电输出)/模拟输出/DIP8 |
* Cadence、Cadence徽标、OrCAD和OrCAD徽标是Cadence Design Systems, Inc.的商标或注册商标。
* 本文提及的公司名称、产品名称和服务名称可能是其各自公司的商标。