TPW2900ENH

Power MOSFET (N-ch 150V<VDSS≤250V)

  • 相关参考设计(3)

数据表

TPW2900ENH 数据表/日文[Oct,2019]PDF: 474KB

数据表

TPW2900ENH 数据表/英文[Oct,2019]PDF: 389KB

Simulation Model

PSpice Model[Jan,2024]ZIP: 42KB

Simulation Model

LTspice Model[Feb,2024]ZIP: 49KB

Simulation Model

SIMetrix Model[Feb,2024]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Feb,2024]ZIP: 12KB

Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

数据表

TPW2900ENH 数据表/日文[Oct,2019]PDF: 474KB

数据表

TPW2900ENH 数据表/英文[Oct,2019]PDF: 389KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jan,2024]ZIP: 42KB

Simulation Model

LTspice Model[Feb,2024]ZIP: 49KB

Simulation Model

SIMetrix Model[Feb,2024]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Feb,2024]ZIP: 12KB

Reliability Information

Reliability Data[Oct,2024]PDF: 276KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name DSOP Advance
Package Image 东芝 TPW2900ENH Power MOSFET (N-ch 150V&lt;VDSS&le;250V)产品 DSOP Advance 封装图片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 5.0×6.0×0.73
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *3

Download from UltraLibrarian® in your desired CAD format
*1 *3
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>*2 *3

Download from SamacSys
*2 *3

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*3

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 200 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 36 A
Power Dissipation PD 142 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 4.0 V
Gate threshold voltage (Min) Vth - 2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 29 mΩ
Input capacitance (Typ.) Ciss - 1700 pF
Total gate charge (Typ.) Qg VGS=10V 22 nC
Reverse recovery time (Typ.) trr - 93 ns
Reverse recovery charge (Typ.) Qrr - 300 nC
购买及样品申请
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您可以通过以下链接搜索及购买少量样品。

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Jan,2024

Feb,2024

Feb,2024

Feb,2024

Oct,2024

*1

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

*2

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

可订购器件型号

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS 库存查询
TPW2900ENH,L1Q 5000 Yes

参考设计

采用贴片式SiC MOSFET的3kW服务器和通信电源
近年来，数据中心规模不断扩大，密度不断提升。因此，服务器电源也需要更高效、更强大、更节省空间，高功率密度至关重要。我们采用最新的贴片式SiC器件，将电源从主板分离，并将其作为子板实现，从而实现了高功率密度。
除了服务器应用外，该解决方案还适用于通信系统和其他使用48V的应用。
本参考设计提供了电路各部分的设计要点、使用方法和调整方法的说明，以及电路图、电路板布局等设计信息，可为您的设计提供帮助。
详细信息
采用贴片式SiC MOSFET的AI服务器3kW电源
随着生成式人工智能 (Generation AI) 的快速发展，对高性能人工智能服务器的需求日益增长。本设计是一款专为高功耗AI服务器打造的3kW电源，搭载我们贴片式SiC MOSFET，实现了高功率密度。
我们提供电路各部分的设计技巧、操作方法以及电路图和PCB图案等设计信息，供您设计时参考使用。
详细信息
采用SiC MOSFET的3kW电源，适用于电动自行车快速充电器
近年来，随着碳中和理念的日益普及，电动自行车逐渐受到青睐，从而推动了对快速电池充电的需求。本参考设计展示了一款专为电动自行车快速充电器定制的3kW电源。
我们提供电路各部分的设计技巧、操作方法以及电路图和PCB板图等设计信息，请将其用于您的设计中。
详细信息

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