Small-signal MOSFET
Application Scope | High-Speed Switching |
---|---|
Polarity | N-ch |
Generation | U-MOSⅢ |
Internal Connection | Single |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
本产品为量产产品,新设计中还推荐使用以下新产品。
器件型号 | 兼容性 | 备注 |
---|---|---|
SSM3K56FS | Almost same package but similar characteristics | - |
Toshiba Package Name | SOT-416 (SSM) |
---|---|
Package Image | |
JEITA | SC-75 |
Package Code | SOT-416 |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
1.6×1.6×0.7 |
Package Dimensions | 查看 |
Land pattern dimensions | 查看 |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
Please refer to the link destination to check the detailed size.
(Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).
项目 | 符号 | 值 | 单位 |
---|---|---|---|
Drain-Source voltage | VDSS | 20 | V |
Gate-Source voltage | VGSS | +/-10 | V |
Drain current | ID | 500 | mA |
Power Dissipation | PD | 0.15 | W |
项目 | 符号 | 条件 | 值 | 单位 |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 1.0 | V |
Gate threshold voltage (Min) | Vth | - | 0.35 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 1.52 | Ω |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 1.14 | Ω |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 850 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 660 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=5V | 630 | mΩ |
Input capacitance (Typ.) | Ciss | - | 46 | pF |
Total gate charge (Typ.) | Qg | VGS=4V | 1.23 | nC |