2SK2963

停产产品

Power MOSFET (N-ch single 60V<VDSS≤150V)

数据表

2SK2963 数据表/日文[Sep,2009]PDF: 278KB

数据表

2SK2963 数据表/英文[Mar,2008]PDF: 262KB

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数据表

2SK2963 数据表/日文[Sep,2009]PDF: 278KB

数据表

2SK2963 数据表/英文[Mar,2008]PDF: 262KB

相关技术数据

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Catalog

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产品概要

Application Scope Relay drivers
Polarity N-ch
Generation L²-π-MOSⅤ
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name PW-Mini
Package Image 东芝 2SK2963 Power MOSFET (N-ch single 60V&lt;VDSS&le;150V)产品 PW-Mini 封装图片
JEITA SC-62
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)		 4.6×4.2×1.6
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 100 V
Drain current ID 1 A

电气特性

项目 符号 条件 值 单位
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 950 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 700 mΩ
Input capacitance (Typ.) Ciss - 140 pF

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