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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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什么是MOSFET?
MOSFET指金属氧化物半导体场效应晶体管。它是具有MOS结构的场效应晶体管。通常而言，MOSFET是一个三引脚器件，分别是栅极（G）、漏极（D）和源极（S）。漏极（D）和源极（S）之间的电流传导通过施加至栅极（G）的电压进行控制。就相对较高的速度和低损耗的操作而言，MOSFET优于双极晶体管。 根据沟道极性，有P型和N型，通过控制方法有常闭（栅极电压0V截止）的增强型和常闭（栅极电压0V无效）的耗尽型。 增强类型很受欢迎。
关于MOSFET结构的说明，请参考以下文件。
结构和特点：功率MOSFET应用说明（PDF：484KB）