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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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数据表中规定的导通电阻:RDS(ON)在测量条件下应用栅极电压值。或者以这个值作为参考。
在栅极阈值电压下沟道未充分形成时漏源之间的导通电阻较大,在导通电阻测量条件下设置栅极阈值电压是不合适的。数据表中描述的测量条件的栅极电压是在 RDS(ON)特性几乎稳定的条件下设置的。使用此测量条件的栅极电压作为参考。
当增加栅极-源极电压VGS时,VGS包括浪涌电压应不超过绝对最大额定值。
有关MOSFET栅极电压的详细信息,请参阅以下文档。