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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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电源开／关控制及反接保护电路（N沟道型）
12V电源线N沟道MOSFET开关控制和反接保护电路示例
产品线
U-MOS系列40V N沟道MOSFET
器件型号 |
|
导通电阻（最大值）[mΩ] @VGS＝10V |
封装 |
|---|---|---|---|
40 |
3.8 |
||
120 |
1.35 |
||
150 |
0.79 |
||
150 |
0.79 |
||
XPJR6604PB * |
（200） |
（0.66） |
S-TOGL™ |
400 |
0.30 |
L-TOGL™ |
*：开发中（括号内的数值为暂定规格。规格如有更改，恕不另行通知。）
栅极驱动IC（用于开关）
通用小信号MOSFET
器件型号 |
||||
|---|---|---|---|---|
封装 |
||||
VDSS[V] |
60 |
-60 |
-20 |
|
ID[A] |
0.4 |
-0.4 |
-0.8 |
|
RDS(ON) @|VGS|＝4.5V[Ω] |
典型值 |
1.2 |
1.4 |
0.31 |
最大值 |
1.75 |
1.9 |
0.39 |
|
驱动电压[V] |
4.5 |
-4.0 |
-1.2 |
|
极性 |
N沟道 |
P沟道 |
P沟道 |
|
通用小信号双极晶体管
*表示UFM封装
小信号偏置电阻内置晶体管（BRT）
| 器件型号 | NPN（BRT） | PNP（BRT） | |
|---|---|---|---|
| 封装 | ES6 (SOT-563) | RN1907FE | RN2907FE |
| US6 (SOT-363) | RN1901 | RN2901 | |
| VCEO[V] | 50 | -50 | |
| IC[mA] | 100 | -100 | |
TVS二极管（用于CAN通信）
器件型号 |
|||
|---|---|---|---|
封装 |
|||
VESD[kV]@ISO 10605 |
±30 |
±30 |
±20 |
VRWM（最大值）[V] |
12 |
24 |
28 |
Ct（典型值／最大值）[pF] |
9／10 |
6.5／8 |
|
RDYN（典型值）[Ω] |
0.8 |
1.1 |
1.5 |
*S-TOGL™和L-TOGL™是东芝电子元件及存储装置株式会社的商标。
*本文提及的公司名称，产品名称和服务名称可能是其各自公司的商标。