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About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Compact design with a PCB size equivalent to Toshiba's iXPLV-package SiC MOSFET module (Dimensions: 68 mm × 100 mm).
Single 24 V DC input generates +20 V / -6.7 V gate drive voltages and supports high-current gate driving with buffer MOSFETs.
Features comprehensive protection functions, including DESAT overcurrent protection, UVLO, Active Miller Clamp (AMC), and FLT signal output for fault detection.
Compact design with a PCB size equivalent to Toshiba's E3D-package SiC MOSFET module (Dimensions: 62 mm × 100 mm)
Single 24 V DC input generates +20 V/-6.7 V gate drive voltages and supports high-current gate driving with buffer MOSFETs
Features comprehensive protection functions, including DESAT overcurrent protection, UVLO, Active Miller Clamp (AMC), and FLT signal output for fault detection