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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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MG800FXF2YMS3

开发中

SiC MOSFET Modules

产品概要

Feature All SiC MOSFET type
Application High power switching (Power conversion, Motor drive)
Circuit Configuration 2in1
RoHS Compatible Product(s) (#) Please contact us.

封装

Toshiba Package Name iXPLV
Mounting Through Hole

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 单位
Drain current (DC) ID 800 A
Drain-Source voltage VDSS 3300 V
Channel temperature Tch 175

电气特性

项目 符号 条件 单位
Drain-source on-voltage(Sense terminal) (Typ.) VDS(on)sense ID=800A
Tch=25℃
VGS=20V
1.3 V
Source-drain off-voltage(Sense terminal) (Typ.) VSD(off)sense IS=800A
Tch=25℃
VGS=-6V
2.1 V
Turn-on switching loss (Typ.) Eon - 250 mJ
Turn-off switching loss (Typ.) Eoff - 240 mJ
Reverse recovery loss (Typ.) Err - 10 mJ
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