TPCA8120

Power MOSFET (P-ch single)

全部 Data sheet 应用说明 Other

数据表

TPCA8120 数据表/日文[Feb,2014]PDF: 351KB

数据表

TPCA8120 数据表/英文[Feb,2014]PDF: 229KB

Simulation Model

PSpice Model[May,2016]lib: 3KB

Thermal Simulation Model

Simplified CFD Model[Feb,2023]ZIP: 8KB

Reliability Information

Reliability Data[Dec,2023]PDF: 276KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

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The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

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The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

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The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

数据表

TPCA8120 数据表/日文[Feb,2014]PDF: 351KB

数据表

TPCA8120 数据表/英文[Feb,2014]PDF: 229KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

相关技术数据

The thermal stability and thermal design:Bipolar Transistor Application Notes[Mar,2021]PDF: 525KB

相关技术数据

The maximum ratings:Bipolar Transistor Application Notes[Mar,2021]PDF: 615KB

相关技术数据

The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes[Jan,2021]PDF: 513KB

相关技术数据

The terms used in data sheets:Bipolar Transistor Application Notes[Jan,2021]PDF: 546KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

相关技术数据

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

相关技术数据

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

相关技术数据

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

相关技术数据

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

相关技术数据

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

相关技术数据

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

相关技术数据

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

相关技术数据

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

相关技术数据

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

相关技术数据

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

相关技术数据

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

相关技术数据

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

相关技术数据

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

相关技术数据

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

相关技术数据

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

相关技术数据

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[May,2016]lib: 3KB

Thermal Simulation Model

Simplified CFD Model[Feb,2023]ZIP: 8KB

Reliability Information

Reliability Data[Dec,2023]PDF: 276KB

Catalog

Selection Guide MOSFETs 2024 Rev1.0[Jan,2024]PDF: 3941KB

Catalog

MOSFETs[Mar,2016]PDF: 2526KB

Catalog

Part Number List: MOSFETs[Mar,2016]PDF: 1295KB

Application Scope	Lithium-Ion Secondary Batteries / Power Management Switches
Polarity	P-ch
Generation	U-MOSⅥ
Internal Connection	Single
RoHS Compatible Product(s) (#)	Available

Application Scope

Lithium-Ion Secondary Batteries / Power Management Switches

Polarity

P-ch

Generation

U-MOSⅥ

Internal Connection

Single

RoHS Compatible Product(s) (#)

Available

封装

Toshiba Package Name	SOP Advance
Package Image
Pins	8
Mounting	Surface Mount
Width×Length×Height (mm)	5.0×6.0×0.95
Package Dimensions	查看
Land pattern dimensions	查看
CAD data (Symbol, Footprint and 3D model)	Download from UltraLibrarian^® in your desired CAD format (Note)

Please refer to the link destination to check the detailed size.

(Note) Ultra Librarian^® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

项目	符号	值	单位
Drain-Source voltage	V_DSS	-30	V
Gate-Source voltage	V_GSS	+20/-25	V
Drain current	I_D	-45	A
Power Dissipation	P_D	45	W

项目

符号

值

单位

Drain-Source voltage

V_DSS

-30

Gate-Source voltage

V_GSS

+20/-25

Drain current

I_D

-45

Power Dissipation

P_D

项目	符号	条件	值	单位
Gate threshold voltage (Max)	V_th	-	-2.0	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	3	mΩ
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4.5V	4	mΩ
Input capacitance (Typ.)	C_iss	-	7420	pF
Total gate charge (Typ.)	Q_g	V_GS=-10V	190	nC

项目

符号

条件

值

单位

Gate threshold voltage (Max)

V_th

-2.0

Drain-Source on-resistance (Max)

R_DS(ON)

|V_GS|=10V

mΩ

Drain-Source on-resistance (Max)

R_DS(ON)

|V_GS|=4.5V

mΩ

Input capacitance (Typ.)

C_iss

7420

Total gate charge (Typ.)

Q_g

V_GS=-10V

190

Orderable part number (example)	MOQ(pcs)	Reliability Information	RoHS
TPCA8120,L1Q	5000		Yes

Orderable part number
(example)

MOQ(pcs)

Reliability
Information

RoHS

TPCA8120,L1Q

5000

Yes

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.

For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

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