请输入3个以上字符
About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
公司信息
产品新闻2022年3月
东芝电子元件及存储装置株式会社 (“东芝”) 推出了用于车载设备的40V N沟道MOSFET“SSM6K804R”,以扩充产品线。
新产品SSM6K804R采用新工艺制造,实现业界领先[1] 低导通电阻,4.5V栅源电压条件下,最大导通电阻为18mΩ。此外,扁平引线封装提高了芯片安装能力,降低热阻。产品采用小型TSOP6F封装,额定功耗仅为1.5W[2],有助于降低设备能耗。
与东芝同等额定功耗的SOP-8封装产品相比[3],TSOP6F封装产品安装面积约减小70%,有助于减小设备尺寸。此外,产品符合AEC-Q101标准,适用于车载DC-DC转换器等各种应用。
注:
[1]与TSOP6F级封装,具有相同最大额定值的产品进行比较,根据东芝调查(截至2022年2月)
[2]安装在环氧树脂板上(FR4,25.4mm×25.4mm×1.6mm,铜焊盘:645mm2)
[3]TP89R103NL等
(@Ta=25°C)
器件型号 |
极性 |
封装 |
绝对最大额定值 |
电气特性 |
||||||
---|---|---|---|---|---|---|---|---|---|---|
名称 |
尺寸典型值 (mm) |
漏极-源极电压 VDSS (V) |
栅极-源极电压 VGSS (V) |
漏极电流 (直流) ID (A) |
功耗 PD (W) |
漏极-源极 导通电阻 RDS(ON) 最大值 (mΩ) |
输入电容 Ciss 典型值 (pF) |
栅极总荷电量 Qg 典型值 (nC) |
||
@VGS= 4.5V |
||||||||||
N沟道 |
TSOP6F |
2.9×2.8×0.8 |
40 |
±20 |
12 |
1.5 |
18 |
1110 |
7.5 |
|
30 |
15 |
12 |
1130 |
7.5 |
||||||
60 |
6 |
51 |
550 |
9.3 |
||||||
100 |
3.5 |
92 |
430 |
3.2 |
||||||
100 |
10 |
36.4 |
1110 |
8.5 |
注
[4]现有产品
注:
本文所示应用电路仅供参考。
需要进行全面评估,特别是在量产设计阶段。
提供这些应用电路示例并不授予任何工业产权许可。
*本文档中的产品价格和规格、服务内容和联系方式等信息,在公告之日仍为最新信息,如有变更,恕不另行通知。