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新一代超结N沟道功率MOSFET“DTMOSVI系列”的阵容扩展,有助于提高电源效率:TK110N65Z,TK110Z65Z,TK110A65Z,TK125V65Z,TK155A65Z,TK170V65Z,TK190A65Z,TK210V65Z

产品新闻2020年03月

The package photograph of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

东芝电子元件及存储装置株式会社(简称“东芝”) 推出了8款新一代[1]650V超结N沟道功率MOSFET“DTMOSVI系列”产品,它们分别是“TK110N65Z”、“TK110Z65Z”、“TK110A65Z”、“TK125V65Z”、“TK155A65Z”、“TK170V65Z”、“TK190A65Z” 和 “TK210V65Z”,其主要应用于数据中心和光伏发电机功率调节器等工业设备的开关电源,这些产品扩大了封装和导通电阻方面的产品线。

新一代DTMOSVI系列与上一代DTMOSIV-H系列相比,降低了“漏极-源极导通电阻x栅极-漏极电荷”(品质因数)的值约为40%,使开关电源的效率提高了约0.36%[2]

东芝将通过继续扩大其产品线以满足市场发展趋势,从而帮助提高电源效率。

注:
[1] 截止2020年3月,东芝调研。
[2] 截止2020年3月东芝的测量值(通过使用输出功率为2500 W的PFC电路来对比新产品系列中的TK040N65Z与传统产品系列中的TK62N60X)

特性

  • “漏源导通电阻x栅极-漏极电荷”的值—— 降低约40 %[3]以提高开关电源的效率。

注:
[3] 与传统DTMOSIV-H系列比较

应用

工业设备的开关电源

  • 数据中心(服务器电源等)
  • 光伏发电机的功率调节器
  • 不间断电源系统

产品规格

(@Ta=25 °C)

器件型号 封装 极性 绝对最大额定值 漏源导通电阻
RDS(ON)
最大值@VGS=10V
(Ω)
栅极总电荷
Qg
典型值
(nC)
栅极-漏极电荷
Qgd
典型值
(nC)

输入电容Ciss
典型值
(pF)
传统系列
器件型号
(DTMOSIV-H)
漏源电压
VDSS
(V)
漏极电流
(DC)
ID
(A)
TK110N65Z TO-247 N沟道 650 24 0.11 40 11 2250 TK25N60X
TK110Z65Z TO-247-4L 650 24 0.11 40 11 2250 TK25Z60X
TK110A65Z TO-220SIS 650 24 0.11 40 11 2250 TK25A60X
TK125V65Z DFN8x8 650 24 0.125 40 11 2250 TK25V60X
TK155A65Z TO-220SIS 650 18 0.155 29 8 1635 TK20A60W[4]
TK170V65Z DFN8x8 650 18 0.17 29 8 1635 TK20V60W[4]
TK190A65Z TO-220SIS 650 15 0.19 25 7.1 1370 TK16A60W[4]
TK210V65Z DFN8x8 650 15 0.21 25 7.1 1370 TK17V65W[4]

注:
[4] DTMOSIV系列

内部电路

The illustration of internal circuits of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

应用电路示例

The illustration of application circuit examples of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

本文所示应用电路仅供参考。
需要进行全面评估,特别是在量产设计阶段。
提供这些应用电路实例并不授予任何工业产权许可。

特性比较[1]

The illustration of comparison of characteristics of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

注:
[5] 测量数据的平均值

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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