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我们60V N通道功率MOSFET U-MOSIX-H系列中有助于降低电源EMI的低峰值产品:TPH1R306P1

产品新闻2018年4月

The package photograph of a low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1.

“TPH1R306P1”是我们60V N通道功率MOSFET U-MOSIX-H系列的新产品,适用于电源。
新产品使用SOP Advance贴片式封装,扩大了该产品线。它是采用具有低电压沟槽结构的最新工艺U-MOSIX-H制造而成的低峰值产品。这款新产品能够保持开关操作时漏极和源极之间所产生的低峰值电压,所以适用于要求低EMI的开关电源次级侧的同步整流。
低峰值产品和高效产品均被列入了U-MOSIX-H系列,所以用户可以选择适合其应用的产品。

特点

  • 内业最低水平的导通电阻[1]
      RDS(ON)=1.28mΩ(最大值)@VGS=10V
  • 低峰值
  • 允许4.5V逻辑电平驱动

注:
[1] 截止于2018年3月东芝电子元件及存储装置株式会社的调查。

应用

  • 各种电源
    (高效DC-DC转换器、高效AC-DC转换器、开关电源等)
  • 电机控制设备
    (电机驱动等)

产品规格

(除非另有规定,@Ta=25°C)

器件型号 最大绝对
额定值
漏极-源极
导通电阻
RDS(ON)最大值
(mΩ)
总栅
极电荷
Qg
典型值
(nC)
输出
电荷
Qoss
典型值
(nC)
输入电容
Ciss
典型值
(pF)
栅极
电阻
rg
典型值
(Ω)
封装
漏极-
源极
电压
VDSS
(V)
漏极
电流
(DC)
ID
@TC=25°C
(A)
@VGS
=10V
@VGS
=4.5V
TPH1R306P1 60 100 1.28 2.3 91 77.5 6250 2.2 SOP Advance

内部电路

The illustration of internal circuit of a low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1.

应用电路实例

The illustration of application circuit example of a low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1.

The illustration of application circuit example of a low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1.

本文所示应用电路仅供参考。需要进行全面评估,特别是在量产设计阶段。东芝电子元件及存储装置株式会社提供这些应用电路实例并不表示提供了任何的工业产权许可。

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.