型号搜索

交叉搜索

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

关键词搜索

参数搜索

库存查询与购买

有助于提高电源PFC效率的650V SiC SBD产品线扩展:TRS12N65FB,TRS16N65FB,TRS20N65FB,TRS24N65FB

产品新闻2020年7月

The package photograph of lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB.

东芝电子元件及存储装置株式会社(简称“东芝”)为扩大其产品线,现推出了四款650V肖特基势垒二极管(SBD):“TRS12N65FB”、“TRS16N65FB”、“TRS20N65FB”和“TRS24N65FB”。这四款SBD产品均为碳化硅材质,这种新兴材料能提高电源功率因数校正(PFC)效率。这些产品均采用TO-247封装并具有12A、16A、20A、24A等四种正向直流额定值(双支路),可提高设备功率。
这几款新产品均为采用优化JBS(结势垒控制肖特基)架构的东芝第二代工艺碳化硅(SiC)肖特基势垒二极管(SBD),具有大浪涌电流和低损耗等性能特性,其非重复性峰值正向浪涌额定电流(单支路)和典型正向电压(单支路)分别为92A[1]及1.45V,相较于我们的第一代工艺产品,该额定电流约提高了53%[2],该电压约降低了6%[2]。这些特性使我们在进行设备的散热设计时提高了效率和裕度。

东芝未来还会扩展该系列产品线,帮助通信设备、服务器、逆变器和其他产品提升效率并实现小型化。

注:
[1] 以TRS24N65FB为例
[2] TRS24N65FB与TRS24N65D相比较

特性

  • 较高的非重复性峰值正向浪涌额定电流:
      IFSM(单支路)/(双支路)=52A/104A(TRS12N65FB)
      IFSM(单支路)/(双支路)=65A/130A(TRS16N65FB)
      IFSM(单支路)/(双支路)=79A/158A(TRS20N65FB)
      IFSM(单支路)/(双支路)=92A/184A(TRS24N65FB)
  • 较低的正向电压:
      VF(单支路)=1.45V(典型值),在IF=6A条件下(TRS12N65FB)
      VF(单支路)=1.45V(典型值),在IF=8A条件下(TRS16N65FB)
      VF(单支路)=1.45V(典型值),在IF=10A条件下(TRS20N65FB)
      VF(单支路)=1.45V(典型值),在IF=12A条件下(TRS24N65FB)

应用

  • 工业设备的电源
    (基站、PC服务器,电车供电设施和激光加工机床等)
  • 消费设备的电源
    (有机EL电视、音频放大器、投影仪和多功能打印机等)

产品规格

(除非另有说明,@Ta=25 °C)

器件型号 TRS12N65FB TRS16N65FB TRS20N65FB TRS24N65FB
封装 TO-247
绝对最大额定值 反向重复峰值电压
VRRM(V)
650
正向直流电流
IF(DC)(A)
双支路 12 16 20 24
非重复性峰值正向浪涌电流IFSM(A)
@t=10ms
单支路 52 65 79 92
双支路 104 130 158 184
结温Tj(°C) 175
反向电流
IR典型值(μA)
@VR=650V
单支路 0.3 0.4 0.5 0.6
正向电压VF典型值(V) 单支路   1.45
@IF(A) 6 8 10 12

结电容总电荷Qcj 典型值(nC)
@VR=0.1至400V
单支路 15 19.4 24 30
热导通阻抗(结到管壳)
Rth(j-c)最大值(°C/W)
@Tc=25°C
单支路 2.2 1.8 1.4 1.3
双支路 1.1 0.9 0.7 0.65

内部电路

The illustration of internal circuit of lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB.

应用电路示例

The illustration of application circuit example of lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB.

本文所示应用电路仅供参考。需要进行全面评估,特别是在量产设计阶段。提供这些应用电路实例并不授予任何工业产权许可。

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

在新窗口打开