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公司信息
产品新闻2020年7月
东芝电子元件及存储装置株式会社(简称“东芝”)为扩大其产品线,现推出了四款650V肖特基势垒二极管(SBD):“TRS12N65FB”、“TRS16N65FB”、“TRS20N65FB”和“TRS24N65FB”。这四款SBD产品均为碳化硅材质,这种新兴材料能提高电源功率因数校正(PFC)效率。这些产品均采用TO-247封装并具有12A、16A、20A、24A等四种正向直流额定值(双支路),可提高设备功率。
这几款新产品均为采用优化JBS(结势垒控制肖特基)架构的东芝第二代工艺碳化硅(SiC)肖特基势垒二极管(SBD),具有大浪涌电流和低损耗等性能特性,其非重复性峰值正向浪涌额定电流(单支路)和典型正向电压(单支路)分别为92A[1]及1.45V,相较于我们的第一代工艺产品,该额定电流约提高了53%[2],该电压约降低了6%[2]。这些特性使我们在进行设备的散热设计时提高了效率和裕度。
东芝未来还会扩展该系列产品线,帮助通信设备、服务器、逆变器和其他产品提升效率并实现小型化。
注:
[1] 以TRS24N65FB为例
[2] TRS24N65FB与TRS24N65D相比较
(除非另有说明,@Ta=25 °C)
器件型号 | TRS12N65FB | TRS16N65FB | TRS20N65FB | TRS24N65FB | ||
---|---|---|---|---|---|---|
封装 | TO-247 | |||||
绝对最大额定值 | 反向重复峰值电压 VRRM(V) |
650 | ||||
正向直流电流 IF(DC)(A) |
双支路 | 12 | 16 | 20 | 24 | |
非重复性峰值正向浪涌电流IFSM(A) @t=10ms |
单支路 | 52 | 65 | 79 | 92 | |
双支路 | 104 | 130 | 158 | 184 | ||
结温Tj(°C) | 175 | |||||
反向电流 IR典型值(μA) @VR=650V |
单支路 | 0.3 | 0.4 | 0.5 | 0.6 | |
正向电压VF典型值(V) | 单支路 | 1.45 | ||||
@IF(A) | 6 | 8 | 10 | 12 | ||
结电容总电荷Qcj 典型值(nC) @VR=0.1至400V |
单支路 | 15 | 19.4 | 24 | 30 | |
热导通阻抗(结到管壳) Rth(j-c)最大值(°C/W) @Tc=25°C |
单支路 | 2.2 | 1.8 | 1.4 | 1.3 | |
双支路 | 1.1 | 0.9 | 0.7 | 0.65 |
本文所示应用电路仅供参考。需要进行全面评估,特别是在量产设计阶段。提供这些应用电路实例并不授予任何工业产权许可。
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.