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有助于节电并提高电源PFC效率的650V/12A的SiC SBD:TRS12A65F、TRS12E65F

2020年5月产品新闻

The package photograph of SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F.

东芝电子元件及存储装置株式会社(简称“东芝”)推出“TRS12A65F”和“TRS12E65F”两款650V/12A碳化硅(SiC)肖特基势垒二极管(SBD),这种新兴材料有助于节约电能和提高电源PFC效率。共有两种封装类型,其中TRS12A65F使用绝缘型封装TO-220F-2L,TRS12E65F采用非绝缘型封装TO-220-2L。为了解决设备功耗增加的问题,我们最新推出拥有12A正向电流的产品。

这两款新产品使用第二代优化JBS(结型势垒控制肖特基)架构,其品质因数(VF・Qcj[1])较使用第一代相比降至67%左右[2],因具备最大值为97A[3]的更高的非重复性峰值正向浪涌电流和典型值为1.45V的更低的正向电压。因此,新产品相对不易损坏,且功率损耗较低。介于高电压和低功率损耗的特点,新款碳化硅(SiC)肖特基势垒二极管(SBD)与拥有相同封装尺寸的现有Si FRD[4]产品相比,能够适应更高的电压和电流环境。由于新产品功率损耗降低,因此对产品的散热需求也相应减少,从而提升了散热装置的效率和裕度。

东芝未来还会扩展该系列产品,帮助通信设备、服务器、逆变器和其他产品提升效率并实现小型化。

注:
[1] Qcj:结电容反向电压在0.1V和400V之间的总电荷,根据Cj-VR曲线计算得出(自2019年11月起)
[2] 与TRS12E65C比较
[3] 以TRS12E65F为例
[4] FRD(快速恢复二极管)

特点

  • 较高的非重复性峰值正向浪涌电流:
      IFSM=92A(TRS12A65F)
      IFSM=97A(TRS12E65F)
  • 较低的反向电流:IR=0.6μA(典型值)
  • 两种封装类型:
     绝缘型封装TO-220F-2L(TRS12A65F)
     非绝缘型封装TO-220-2L(TRS12E65F)

应用

  • 工业设备的电源
    (基站、PC服务器,电车供电设施和激光加工机床等)
  • 消费设备的电源
    (有机EL电视、音频放大器、投影仪和多功能打印机等)

产品规格

(@Ta=25°C,除非另有规定)

器件型号 TRS12A65F TRS12E65F
封装 TO-220F-2L
(绝缘型)
TO-220-2L
(非绝缘型)
绝对
最大
额定值
反向重复峰值电压VRRM(V) 650
正向直流电流IF(DC)(A) 12
非重复性峰值正向浪涌电流IFSM(A) @t=10ms 92 97
结温Tj(°C) 175
反向电流IR典型值(μA) @VR=650V 0.6
正向电压VF典型值(V) @IF=12A 1.45
总电容电荷Qcj典型值(nC) @VR=0.1至400V 30[1]
热阻抗(结到管壳)Rth(j-C)最大值(°C/W) 3.65 1.3

内部电路

The illustration of internal circuit of SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F.

应用电路实例

The illustration of application circuit example of SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F.

本文所示应用电路仅供参考。需要进行全面评估,特别是在量产设计阶段。提供这些应用电路实例并不授予任何工业产权许可。

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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