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Power transistor for high-speed switching applications


Application Scope Audio amplifier output stage 130-W
Features Power Amps Output Stage
Polarity NPN
Complementary Product 2SA2120
Comments Rank is specified by hFE range.
RoHS Compatible Product(s) (#) Available
Assembly bases 日本


Toshiba Package Name TO-3P(N)
Package Image TO-3P(N)
Pins 3
Mounting Through Hole
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC 12 A
Collector power dissipation PC 200 W
Collector-Base Voltage VCBO 200 V
Collector-emitter voltage VCEO 200 V


项目 符号 条件 数值 单位
Transition frequency (Typ.) fT IC=1A
30 MHz
DC Current Gain hFE (Max) hFE IC=1A
160 -
DC Current Gain hFE (Min) hFE IC=1A
55 -
Collector Emitter Saturation Voltage (Max) VCE(sat) IB=800mA




数据表 2SC5948 数据表/日文 [Nov,2006] (PDF: 211KB)
数据表 2SC5948 数据表/英文 [Nov,2006] (PDF: 153KB)
Reliability Information Reliability Data [Apr,2016] (PDF: 86KB)
相关技术数据 The maximum ratings:Bipolar Transistor Application Notes [Mar,2019] (PDF: 1414KB)
相关技术数据 The thermal stability and thermal design:Bipolar Transistor Application Notes [Sep,2018] (PDF: 1140KB)
相关技术数据 The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes [Sep,2018] (PDF: 1439KB)
相关技术数据 The terms used in data sheets:Bipolar Transistor Application Notes [Sep,2018] (PDF: 1034KB)
Catalog Bipolar Power Transistors [Jun,2015] (PDF: 1139KB)

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Orderable part number

Orderable part number
MOQ(pcs) Reliability
2SC5948-O(Q) 50 Yes


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