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采用有助于提高电源效率的新工艺,80V N沟道功率MOSFET的产品线扩展:TK2R4E08QM、TK3R3E08QM、TK5R3E08QM、TK7R0E08QM、TK2R4A08QM、TK3R2A08QM、TK5R1A08QM、TK6R8A08QM、TK5R1P08QM、TK6R9P08QM

产品新闻2021年3月

The package photograph of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM.

东芝电子元件及存储装置株式会社(“东芝”)推出了10款适用于工业设备开关电源的新一代80 V N沟道功率MOSFET“U-MOSⅩ-H系列”产品。共提供三种类型的封装: “TK2R4E08QM、TK3R3E08QM、 TK5R3E08QM 和 TK7R0E08QM” 采用双列直插式封装TO-220; “TK2R4A08QM、 TK3R2A08QM、 TK5R1A08QM 和 TK6R8A08QM” 采用绝缘型直插式封装TO-220SIS;以及“TK5R1P08QM 和 TK6R9P08QM”采用贴片式封装DPAK。

新产品采用新一代具有低压沟槽结构的U-MOSⅩ-H工艺,具有业内领先的[1]低漏源导通电阻。这减少了导通损耗,有助于降低设备的功耗。此外,它们继承了现有工艺U-MOSVIII-H的低栅极开关电荷特性。这降低了漏源导通电阻x栅极开关电荷[2]的值(开关应用的品质因数)。

注:
[1] 相对于具有相同评级的产品,截至2021年2月东芝的调查。
[2] 与TK100E08N1(U-MOSVIII-H系列)相比,TK2R4E08QM的“典型漏源导通电阻×典型栅极开关电荷”降低了8%左右。

特性

  • 业内最低等级[1]的导通电阻:
       RDS(ON)=2.44mΩ(最大值 )@VGS=10V(TK2R4E08QM)
  • 低电荷(输出和栅极开关)
  • 低栅极电压驱动(6V驱动)

应用

  • 工业设备的开关电源
    (高效AC-DC转换器、高效DC-DC转换器等)
  • 电机控制设备(电机驱动器等)

产品规格

(除非另有规定,@Ta=25 °C)

器件型号 绝对最大额定值


漏源导通电阻

RDS(ON)最大值
(mΩ)

总栅极电荷
Qg典型值
(nC)


栅极开关电荷

QSW典型值
(nC)

输出电荷
Qoss典型值
(nC)
输入电容
Ciss典型值
(pF)
封装


漏源电压

VDSS(V)

漏极电流(DC)
ID(A)
@Tc=25°C @VGS=10V @VGS=6V
TK2R4E08QM 80 120 2.44 3.2 178 52 210 13000 TO-220
TK3R3E08QM 120 3.3 4.2 110 31 119 7670
TK5R3E08QM 120 5.3 7.3 55 17 66 3980
TK7R0E08QM 64 7.0 9.7 39 11.6 46 2700
TK2R4A08QM 100 2.44 3.1 179 54 210 13000 TO-220SIS
TK3R2A08QM 92 3.2 4.1 102 31 119 7670
TK5R1A08QM 70 5.1 4.1 54 17 66 3980
TK6R8A08QM 58 6.8 9.5 39 13 46 2700
TK5R1P08QM 84 5.1 7.0 56 17 66 3980 DPAK
TK6R9P08QM 62 6.9 9.6 39 11.6 46 2700

内部电路

The illustration of internal circuits of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM.

应用电路示例

The illustration of application circuit examples of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM.
The illustration of application circuit examples of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM.

注:本文所示应用电路仅供参考。
       需要进行全面评估,特别是在量产设计阶段。
       提供这些应用电路示例并不授予任何工业产权许可。

* 本文档中的产品价格和规格、服务内容和联系方式等信息,在公告之日仍为最新信息,如有变更,恕不另行通知。

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