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采用有助于提高电源效率的新工艺80V N沟道功率MOSFET的产品线扩展:TPH2R408QM,TPH4R008QM,TPN8R408QM,TPN12008QM

产品新闻2020年7月

The package photograph of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM.

东芝电子元件及存储装置株式会社(简称“东芝”)的新工艺80V N沟道功率MOSFET“U-MOSX-H系列”产品线中新增了四位“新成员”,该系列产品专门用于工业设备的开关式电源。其中,“TPH2R408QM”和“TPH4R008QM”采用SOP Advance(N)[1]贴片式封装技术实现焊盘图案的工业兼容性;“TPN8R408QM”和“TPN12008QM”采用TSON Advance封装技术。

通过采用最新工艺的U-MOSX-H制程和一种低压沟槽结构,这几款新产品具有行业领先的[2]低漏源导通电阻。同时,通过优化器件结构,还提高了导通电阻与输出电荷之间的互商性[3],从而可减少导通损耗并有助于降低设备能耗。此外,这几款新产品沿袭了现有工艺U-MOSVIII-H的低栅极开关电荷特性,因此降低了“漏源导通电阻与栅极开关电荷的乘积”[4],该值为开关应用领域的一个品质因数。

注:
[1] SOP Advance(N):4.90×6.10mm(典型值)封装技术可实现焊盘图案的工业兼容性,优于SOP Advance。
[2] 截止2020年6月,在额定值相同的产品中。东芝调研。
[3] 相较于TPH4R008NH(U-MOSVIII-H系列),TPH2R408QM的“典型漏源导通电阻与典型输出电荷的乘积”约提高了31%。
[4] 相较于TPH4R008NH(U-MOSVIII-H系列),TPH2R408QM的“典型漏源导通电阻与典型栅极开关电荷的乘积”约降低了10%。

特性

  • 行业最低水平的[2]导通电阻:
      RDS(ON)=2.43mΩ(最大值)@VGS=10V(TPH2R408QM)
      RDS(ON)=4mΩ(最大值)@VGS=10V(TPH4R008QM)
      RDS(ON)=8.4mΩ(最大值)@VGS=10V(TPN8R408QM)
      RDS(ON)=12.3mΩ(最大值)@VGS=10V(TPN12008QM)
  • 低输出电荷、低栅极开关电荷
  • 低栅极电压驱动(6V驱动)

 

应用

  • 工业设备的开关电源
     (高效AC-DC逆变器,高效DC-DC逆变器等)
  • 电机控制设备(电机驱动器等)

 

产品规格

(除非另作说明,@Ta=25°C)

器件型号 绝对最大额定值 漏源导通电阻
RDS(ON)
最大值
(mΩ)
栅极总电荷
Qg
典型值
(nC)
栅极开关电荷
QSW
典型值
(nC)
输出电荷
Qoss
典型值
(nC)

输入电容
Ciss
典型值

(pF)

封装
漏源电压
VDSS
(V)
漏极电流
(DC)
ID
(A)
@Tc=
25 °C
@VGS=
10 V
@VGS=
6 V
TPH2R408QM 80 120 2.43 3.5 87 28 90 5870 SOP Advance(N)
[1]
TPH4R008QM 86 4 5.6 57 18 60 3750
TPN8R408QM 32 8.4 12.4 28 8.4 29.9 1750 TSON Advance
TPN12008QM 26 12.3 17.7 22 6.5 21.1 1280

内部电路

The illustration of internal circuit of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM.

应用电路示例

The illustration of application circuit examples of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM.
The illustration of application circuit examples of expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TPH2R408QM, TPH4R008QM, TPN8R408QM, TPN12008QM.

注:本文所示应用电路仅供参考。
      需要进行全面评估,特别是在量产设计阶段。
      提供这些应用电路实例并不授予任何工业产权许可。

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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