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用于车载设备,具有低导通电阻,提供低功耗的小型MOSFET扩大阵容:SSM6J808R,SSM6K819R

产品新闻2020年1月

The package photograph of a lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R.

东芝电子元件及存储装置株式会社(“东芝”)已制造出适用于照明控制开关(比如车载头灯)的两种类型的产品扩大阵容,即:-40V P沟道MOSFET“SSM6J808R”和100V N沟道MOSFET“SSM6K819R”。
通过采用最新工艺[1],新产品具有行业领先[2]的低导通电阻,有助于降低设备的功耗。通过使用小型TSOP6F封装,与具有相等允许功耗的SOP-8封装相比,其安装占用空间减少了大约70%。这有助于减少安装占用空间。此外,它们符合AEC-Q101标准,可用于各种应用,包括车载应用,比如电源线路保护和车载头灯的照明控制开关。

注:
[1] 截止于2019年10月
[2] 与采用TSOP6F类型的封装和具有相同最大额定值的产品相比,根据截止于2019年10月的东芝调查

特点

  • 凭借行业领先[2]的低导通电阻,降低了功耗
      RDS(ON)=48mΩ(最大值)@VGS=-4.5V(SSM6J808R)
      RDS(ON)=36.4mΩ(最大值)@VGS=4.5V(SSM6K819R)
  • 使用TSOP6F封装减少安装占用空间(占用空间比SOP-8减少约70%)
  • 符合AEC-Q101

应用

车载设备(头灯、转向灯、日间行车灯等)

产品规格

(@Ta=25°C)

器件型号 极性 封装 最大绝对额定值 漏极-源极导通电阻
RDS(ON)
最大值
@|VGS|
=4.5V
(mΩ)
输入电容
Ciss
典型值
(pF)
总栅极电荷
Qg
典型值
(nC)
名称 尺寸典型值
(mm)
漏极-源极电压
VDSS
(V)
栅极-源极电压
VGSS
(V)
漏极电流
(DC)
ID
(A)
功率耗散
PD
(W)
SSM6J808R P-channel TSOP6F 2.9×2.8 -40 -20/+10 -7 1.5 48 1020 24.2 U-MOSVI
SSM6K819R N-channel 100 ±20 10 1.5 36.4 1110 8.5 U-MOSVIII-H

引脚分布

The illustration of pin assignments of a lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R.

应用电路实例

The illustration of application circuit example of a lineup expansion of small MOSFETs for automotive equipment offering low power consumption with low On-resistance: SSM6J808R, SSM6K819R.

本文所示应用电路仅供参考。
需要进行全面评估,特别是在量产设计阶段。
提供这些应用电路实例并不授予任何工业产权许可。

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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